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Oral Programme

 

The conference Oral programme is available for download here (pdf format).

A data projector and an overhead projector will be available for use in the room of the Oral Presentations.

Speakers intending to use PowerPoint or other software must contact the Conference Secretariat at least one day before their talk.

 

Oral Presentations

 

PROGRAMME Sunday (8) Monday (9) Tuesday (10) Wednesday (11) Thursday (12) Friday (13)
8:00 - 8:30   Registration        
8:30 - 9:15   Opening Session Invited Speaker     Tu1 Invited Speaker     W1 Invited Speaker     Th1 Invited Speaker      F1
9:15 - 9:30 Invited Speaker     M1 Tu2 W2 Th2 F2
9:30 - 9:45 Tu3 W3 Th3 F3
9:45 - 10:00  Tu4 W4 Th4 Cofee Break
10:00 - 10:30 Coffee Break Coffee Break Coffee Break Coffee Break
 Invited Speaker      F4
10:30 - 10:45 Invited Speaker     M2 Tu5 Invited Speaker     W5 Th5
10:45 - 11:00 Tu6 Th6
11:00 - 11:15 Tu7 Th7 Closing Session
11:15 - 11:30 M3 Tu8 W6 Th8
11:30 - 11:45 M4 Tu9 W7 Th9
11:45 - 12:00  M5 Tu10 W8 Th10
12:00 - 14:00 LUNCH LUNCH LUNCH LUNCH  
Excursion  
14:00 - 14:45 Registration Invited Speaker     M6 Invited Speaker     Tu11 Invited Speaker     Th11  
14:45 - 15:00 M7 Tu12 Th12  
15:00 - 15:15 M8 Tu13 Th13  
15:15 - 15:30 M9 Tu14 Th14  
15:30 - 16:00 Coffee Break Coffee Break Coffee Break  
16:00 - 16:15 M10 Poster Session I Poster Session II  
16:15 - 16:30 M11  
16:30 - 16:45   M12  
16:45 - 17:00   M13  
17:00 - 17: 15      
17:15 - 18:00      
19:00 Cocktail          
19:30         Conference Dinner  

 

Oral Presentations on Monday

Monday 9/12/2002
8:00 - 8:30

Registration
8:30 - 9:15

OPENING SESSION
9:15 - 10:00

Session: Quantum Dots Lasers Applications - Chairman: M. Razeghi

9:15 - 10:00

M1 - QD-Lasers and Amplifiers for Metropolitan Area Networks                                                                                             Dieter Bimberg  and Christian Ribbat
Institut für Festkörperphysik, Technische Universitöt Berlin,  Berlin, Germany

10:00 - 10:30

Coffee Break

10:30 - 12:00

Session: Nanoelectronics and Quantum Dots I - Chairman: T. D. Steiner 

10:30 - 11:15

M2 - Challenges in the Implementation of Nanoelectronics                                                                                                      Raphael Tsu
University of North Carolina at Charlotte, Charlotte, USA

11:15 - 11:30 

M3 - Single quantum dot devices for single photon generation                                                                                                           V. Zwiller, T. Aichele, O. Benson
Nano-Optics, Physics dept., Humboldt University, Berlin, Germany
11:30 - 11:45

M4 - Spin Transport Through Quantum Dots                                                                                                                                        A. T. da Cunha Lima, E. V. Anda
Departamento de Física, Pontificia Universidade Católica do Rio de Janeiro, Rio de Janeiro, RJ, Brazil
11:45 - 12:00

M5 - Polariton lasers on semiconductor microcavities                                                                                                                Alexey Kavokin
LASMEA, University Blaise Pascal, Aubiere, France                                                 

12:00 - 14:00

LUNCH
14:00 - 15:30

Session: Nanoelectronics and Quantum Dots I I- Chairman: I. C. da Cunha Lima 
14:00 - 14:45

M6 - Formation of III-V Low Dimensional Structures and Their Applications to Quantum Intelligent Integrated Systems Hideki Hasegawa
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo, Japan
14:45 - 15:00

M7 - Type II quantum dots in magnetic fields: excitonic behaviour                                                                                                    K. L. Janssens, B. Partoens and F. M. Peeters
Departement Natuurkunde, Universiteit Antwerpen, Antwerpen, Belgium
15:00 - 15:15

M8 - Molecular Beam Epitaxy and In Situ Etching for Nanohole and Lateral Quantum Dot Multi-Molecule Fabrication      R. Songmuang, S. Kiravittaya, N. Y. Jin-Phillipp and O.G. Schmidt
Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
15:15 - 15:30

M9 - Photomodulation spectroscopy applied to low-dimensional semiconductor structures                                                          J. Misiewicz, G. Sęk, R. Kudrawiec, K. Ryczko
Institute of Physics, Wrocław University of Technology, Wrocław, Poland
15:30 - 16:00

Coffee Break
16:00 - 17:00

Session: Optoelectronic Devices and Applications - Chairman: Meimei Tidrow
16:00 - 16:15

M10 - Lateral p-n junctions for high-density LED arrays                                                                                                              Pablo O. Vaccaro, A. Vorobev, T. Fleischmann, J. M. Zanardi Ocampo, S. Saravanan, K. Kubota and T. Aida
ATR Adaptive Communications Research Laboratories, 2-2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto, Japan
16:15 - 16:30

M11 - Gate controlled lateral p-n juntions quantum well laser                                                                                                           V. Ryzhii, I. Khmyrova, J. M. Zanardi Ocampo, P. O. Vaccaro, K. Kubota, and T. Aida
University of Aizu, Aizu-Wakamatsu, Japan
16:30 - 16:45

M12 - p-HEMT with tailored Field                                                                                                                                                             S. Mil’shtein, P. Ersland, S. Somisetty and C. Gil
ECE Department, Advanced Electronic Technology Center, University of Massachusetts, Lowell, USA
16:45 - 17:00

M13 - Optical Transitions in Quantum Islands                                                                                                                          Fabrízio M. Alves, G. E. Marques and Flavio Aristone                                                                                                                          DF-CCET/UFSCar, São Carlos, São Paulo, Brazil

 

Oral Presentations on Tuesday

Tuesday 10/12/2002
8:30 - 10:00 Session: Si Based Devices - Chairman: E. F. da Silva Jr.
8:30 - 9:15 Tu1 - MIS Devices Based on SiC, GaN, GaP, and SiGe                                                                                                                          T. P. Ma
Center for Microelectronic Materials and Structures, and Department of Electrical Engineering, Yale University, New Haven, USA
9:15 - 9:30 Tu2 - Towards SiGe Terahertz VCSELs                                                                                                                                                  R. W. Kelsall, Z. Ikonic, P. Harrison, D. J. Paul, S. A. Lynch, R. Bates, D. J. Norris, S. L. Liew, A. G. Cullis, D. D. Arnone, C. R. Pidgeon, P. Murzyn, D. J. Robbins and R. A. Soref
School of Electronic and Electrical Engineering, University of Leeds, U. K.
9:30 - 9:45 Tu3 - Voltage tunable two-band MIR detection based on Si/SiGe quantum well cascade structures                                            P. Rauter, T. Fromherz, G. Dehlinger, H. Sigg, D. Grützmacher, G. Bauer
Institut für Halbleiter- u. Festkörperphysik, Universität Linz, Linz, Austria
9:45 - 10:00  Tu4 - A New Type of Quantum Well: Stacking Faults in Silicon Carbide                                                                             Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, and Patrick R. Briddon
Department of Physics and Measurement Technology, Linköping University, Linköping, Sweden
10:00 - 10:30 Coffee Break
10:30 - 12:00 Session: Optical Properties of Nanodevices - Chairman: H. Hasegawa 
10:30 - 10:45 Tu5 - Influence of crystals distribution on photoluminescence properties in nanocrystaline silicon thin films                        M. F. Cerqueira, M. Stepikhova,  Maria Losurdo, T. Monteiro                                                                                        Departamento de Física, Universidade do Minho, Campus de Gualtar, Braga, Portugal
10:45 - 11:00 Tu6 - Photoluminescence of Ge nano-crystallites embedded in silicon oxide                                                                                    T. V. Torchynska and A. V. Kolobov
ESFM - National Polytechnic Institute, Mexico D.F., Mexico
11:00 - 11:15 Tu7 - Silicon nanostructures embedded in silicon oxynitride films grown by CO2 laser assisted plasma enhanced chemical vapor deposition                                                                                                                                                                                         Ching-Ting Lee, and Chun-Hung Lin
Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, Republic of China
11:15 - 11:30 Tu8 - High Performance Quantum Cascade Lasers at λ=6 µm                                                                                                           M. Razeghi, S. Slivken, A. Evans, J. David                                                                                                                                      Center for Quantum Devices, Dep. of Electrical and Computer Engineering, Northwestern University, Illinois, USA
11:30 - 11:45 Tu9 - Electrorefractive Properties of Modified Five-Layer Asymetric Coupled Quantum Well (FACQW)                                T. Arakawa, K. Tada, R. Iino, T. Suzuki, J-. H. Noh, N. Haneji, and H. Feng
Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama, Japan
11:45 - 12:00 Tu10 - Si-Based Quantum Staircase Terahertz Lasers                                                                                                            Gregory Sun and Richard A. Soref
Department of Physics, University of Massachusetts at Boston, Boston, Massachusetts, U. S. A.
12:00 - 14:00 LUNCH
14:00 - 15:30 Session: Physics of Nanostructures - Chairman: Klaus Lischka 
14:00 - 14:45 Tu11 - Lattice Dynamics in Wide Band Gap Materials Superlattices                                                                                                V. Lemos
Departamento de Física, Universidade Federal do Ceará,  Fortaleza, Ceará, Brazil
14:45 - 15:00 Tu12 - Energy structure and optical properties of semiconductor nanocrystals in a magnetic  field                                         W. Jask olski, J. Planelles, J. Diaz and J. Climente
Instytut Fizyki, Uniwersytet Miko laja Kopernika, Torun, Poland
15:00 - 15:15 Tu13 -The Shapes of Gas-Phase MetCars                                                                                                                                               G. K. Gueorguiev, J. M. Pacheco and Deniz van Heijnsbergen
Departamento de Física, Universidade de Coimbra, Coimbra, Portugal
15:15 - 15:30 Tu14 - Electron emissiom from Nanostructures                                                                                                                                    S. E. Huq and N.S. Xu
Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton Didcot, Oxfordshire, UK
15:30 - 16:00 Coffee Break
16:00 - 18:00 POSTER SESSION I - Chairman: M. Fátima Cerqueira

 

Oral Presentations on Wednesday

Wednesday 11/12/2002
8:30 - 10:00 Session: InAs Based Optical Devices - Chairman: J. P. Leburton
8:30 - 9:15 W1 - Quantum sensing using Type II InAs/GaSb superlattices for infrared       
Manijeh Razeghi, Yajun Wei, Aaron Gin
Center for Quantum Devices, Dep. of Electrical and Computer Engineering, Northwestern University, Illinois, USA
9:15 - 9:30  W2 - Eletric-field and space-charge distributions in InAs/GaAs and InGaAs/GaAs quantum dot infrared Photodetectors: ensemble Monte Carlo particle modeling                                                                                                                                               M. Ryzhii, V. Ryzhii, and V. Mitin
University of Aizu, Aizu-Wakamatsu, Japan
9:30 - 9:45 W3 - Tunable InAs quantum-Dot Lasers Grown on (100) InP                                                                                                             C. Nì. Allen, P. J. Poole, P. Marshall, J. Fraser, S. Raymond, S. Janz and S. Fafard
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada
9:45 - 10:00 W4 - 1.3 µm lasers based on InAs/GaAs quantum dots with high optical gain                                                                                A. R. Kovsh, N. A. Maleev, A. E. Zhukov, S. S. Mikhrin, D. A. Livshits, Y. M. Shernyakov, A . V. Sakharov, M. V. Maximov, V. M. Ustinov, Zh. I. Alferov, J. S. Wang, R. S. Shiao, L. Wei, Y. T. Wu, G. Lin, J. Y. Chi, N. N. Ledentsov, D. Bimberg
A. F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
10:00 - 10:30 Coffee Break
10:30 - 12:00 Session: Growth, Characterization and Applications - Chairman: Christian Ribbat
10:30 - 11:15 W5 - Status of Infrared Materials, Focal Plane Arrays and Future Trends                                                                                    M. Z. Tidrow, W. R. Dyer, and J. Z. Wu
Missile Defense Agency, MDA/AS, Defense Pentagon, Washington DC
11:15 - 11:30 W6 - Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays                                                                                                                                                                                                        F. Patella, F. Arciprete, E. Placidi, S. Nufris, M. Fanfoni, A. Sgarlata and A. Balzarotti
Dipartimento di Fisica, Università di Roma "Tor Vergata" and Istituto Nazionale per la Fisica della Materia, Roma,  Italy
11:30 - 11:45 W7 - Growth of stacked InAs quantum dots in InAlAs matrix on (100) InP substrate                                                                   S. D. Lin, Z. C. Lin and C. P. Lee
Departament of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan, ROC
11:45 - 12:00  W8 - Quasi two-dimensional lateral 2DEG-2DHG junction in AlGaAs/GaAs                                                                                   B. Kaestner, D. A. Williams, D. G. Hasko1
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, United Kingdom
12:00 - 13:30 LUNCH
13:30 - 18:30 EXCURSION

 

Oral Presentations on Thursday

Thursday 12/12/2002
8:30 - 10:00 Session: Wide Gap Semiconductors - Chairman: J. R. Leite
8:30 - 9:15 Th1 - Light emission from Cubic InGaN Nanostructures                                                                                                             Klaus Lischka
University of Paderborn, Dept. of Physics, Paderborn, Germany
9:15 - 9:30 Th2 - Material and device issues of high-perfomence AlGa/GaN HEMTs on silicon substrates                                                     P. Javorka, A. Alam, M. Marso, M. Wolter, J. Kuzmik, A. Fox, M. Heuken, and P. Kordos
Institute of Thin Films and Interfaces, Research Centre Jülich, Jülich, Germany
9:30 - 9:45 Th3 - Structural and electronic properties of AlGaInN quaternary alloys: ab initio calculations                                         Luísa M. R. Scolfaro, Marcelo Marques, Lara K. Teles, and José R. Leite
Instituto de Física, Universidade de São Paulo, São Paulo, S.P., Brazil
9:45 - 10:00  Th4 - Large room temperature Rabi-splitting in II-VI semiconductor microcavity quantum structures                                   D. Schikora, A.Pawlis, A. Khartchenko, O. Husberg, D.J. As and K. Lischka
Department of Physics, University of Paderborn, Paderborn, Germany
10:00 - 10:30 Coffee Break
10:30 - 12:00 Session: Semiconductor Physics - Chairman: T. P. Ma
10:30 - 10:45 Th5 - Stochastic Interpretation of Wigner Transport in Nanostructures                                                                                       M. Nedjalkov, H. Kosina, and S. Selberherr
Institute for Microelectronics, TU Vienna, Vienna, Austria
10:45 - 11:00 Th6 - Dynamical and statistical properties of a two-dimensional binary alloy                                                                                 H. N. Nazareno, P. E. de Brito, E. S. Rodrigues and J. S. Andrade Júnior
ICCMP, Universidade de Brasília, Brasília - DF, Brazil
11:00 - 11:15 Th7 - Vibrational Spectra of Adsorbed Hydrogen on GaN(001) Surfaces                                                                                          F. L. de Almeida, L. C. de Carvalho, and  J. L. A. Alves
DCNAT-FUNREI, São João del Rei, MG, Brazil
11:15 - 11:30 Th8 - Effect of High Temperature and/or Interface Treatments on Photoluminescence from InGaN/GaN Multiple Quantum Wells with Green Light Emissions                                                                                                                                                         W. Liu, S. J. Chua, J. Zhang, X.H. Zhang
Institute of Materials Research and Engineering, Singapore
11:30 - 11:45 Th9 - Electric characterization of InGaN Quantum Well p-n heterostructures                                                                              J. C. González, M. I. N. da Silva, K. L. Bunker, A. D. Batchelor, and P. E. Russell
Laboratorio de Microscopia Eletronica-LNLS, Campinas, SP, Brazil
11:45 - 12:00 Th10 - Lateral confinement of carriers in ultrathin semiconductor quantum wells                                                                      N. Shtinkov, P. Desjardins, and R. A. Masut
Département de Génie Physique and Groupe de Recherche en Physique et Technologie des Couches Minces (GCM), École Polytechnique de Montréal, Succursale “Centre-Ville”, Montréal QC, Canada
12:00 - 14:00 LUNCH
14:00 - 15:30 Session: Growth Characterization and Magnetic Effects in Nanostructures - Chairman: R. Tsu
14:00 - 14:45 Th11 - Growth and Characterization of Boron and Magnesium Boron Dioxide Nanowire Films                                                  J. Z. Wu, S. H. Yun and M. Tidrow
Department of Physics and Astronomy, University of Kansas, USA
14:45 - 15:00 Th12 - Selective area epitaxy for the site selective growth of semiconductor nanostructures                                                      J. Lefebvre, P. J. Poole, D. Chithrani1, G. C. Aers, and R. L. Williams
Institute for Microstructural Sciences, National Research Council, Montreal Road, Ottawa, Ontario, Canada
15:00 - 15:15 Th13 - The effects of external magnetic field on the surface charge distribution of spherical nanoparticles                    Fanyao Qu , N. O.Dantas, S. P. Daud, C. G. Almeida e P.C. Morais
Universidade Federal de Uberlândia, Faculdade de Física, Laboratório de Novos Materiais Isolantes e Semicondutores Uberlândia, Brazil.
15:15 - 15:30 Th14 - Spin-flip Raman scattering in narrow-gap semiconductor quantum wells in magnetic fields: anomalous Landè factors                                                                                                                                                                                                             V. López-Richard, G.-Q. Hai, C. Trallero-Giner, and G. E. Marques
Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos, SP, Brazil
15:30 - 16:00 Coffee Break
16:00 - 18:00 POSTER SESSION II - Chairman: V. Lemos
19:30 CONFERENCE DINNER

 

Oral Presentations on Friday

Friday 13/12/2002
8:30 - 10:00 Session: Nanostructures and Nanotubes - Chairman: J. Z. Wu
8:30 - 9:15 F1 - Spin Polarized Transport in Low Dimensional Structures                                                                                                           I. C. da Cunha Lima
Rio de Janeiro University, Brazil
9:15 - 9:30  F2 - Carbon Nanotubes for AFM Nanolithography                                                                                                                                 P. M. Campbell, E. S. Snow, and J. P. Novak
Naval Research Laboratory, Washington DC, USA
9:30 - 9:45 F3 - Ab Initio Study of Iron Atom Interacting with Carbon Nanotube                                                                                        Solange B. Fagan, Ronaldo Mota, Antônio J. R. da Silva and A. Fazzio
Departamento de Física, Universidade Federal de Santa Maria, Santa Maria, Rio Grande do Sul, Brazil
9:45- 10:15 Coffee Break
10:15 - 11:00 F4 - Spintronics in Quantum Dots                                                                                                                                                       Jean-Pierre Leburton
Department of Electrical and Computer Engineering and Beckman Institute, University of Illinois at Urbana-Champaign,
Urbana, USA
11:00 - 12:00 CLOSING SECTION

 

Conference Scope | Conference Topics | Conference Committees | Venue & Accommodation | Invited Speakers | 

Important Dates | Abstract Submission | Proceedings | Oral Presentation | Poster Presentation | Social Events |

 Registration Information | LDSD 2002 Photographs | Conference Secretariat